2021年12期
刊物介紹
本學(xué)報(bào)是由中國(guó)電子學(xué)會(huì)主辦，中國(guó)科學(xué)院半導(dǎo)體研究所承辦的學(xué)術(shù)刊物，報(bào)道半導(dǎo)體物理學(xué)和半導(dǎo)體科學(xué)技術(shù)領(lǐng)域內(nèi)最新的科研成果和技術(shù)進(jìn)展，被EI、CA、SA等收錄，在中國(guó)科學(xué)院、國(guó)家科委、中共中央宣傳部和國(guó)家新聞出版署的期刊評(píng)比中多次獲獎(jiǎng)。主要欄目有：研究快報(bào)、研究論文、研究簡(jiǎn)報(bào)、技術(shù)進(jìn)展等。
Journal of Semiconductors
RESEARCH HIGHLIGHTS
ARTICLES
- Novel synthesis of cerium oxide nano photocatalyst by a hydrothermal method
- F abrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz
- L ow-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN
- F our-inch high quality crack-free AlN layer grown on a hightemperature annealed AlN template by MOCVD
- Humidity sensing properties of spray deposited Fe doped TiO2 thinfilm
- Synthesis and characterization of ZnS-based quantum dots to trace low concentration of ammonia
- Electricaltransportproperties ofcerium doped Bi2Te3 thin films grownbymolecular beam epitaxy
- Framework for TCAD augmented machine learning on multi-I -V characteristics using convolutional neural network and multiprocessing
- J anusMSiGeN4 (M = ZrandHf) monolayersderived from centrosymmetricβ-MA2Z4:A first-principles study
- >35% 5-junction space solar cells based on the direct bonding technique
- Quantum transport simulation of the two-dimensional GaSb transistors