曾一平

摘 要：該報(bào)告圍繞大失配異質(zhì)體系的應(yīng)力調(diào)控和外延生長(zhǎng)動(dòng)力學(xué)這一重要科學(xué)問(wèn)題，從基于圖形襯底外延成核入手，研究了大失配外延的成核機(jī)理，外延摻雜機(jī)理，優(yōu)化了GaN基藍(lán)光量子阱LED的外延結(jié)構(gòu)生長(zhǎng)和設(shè)計(jì)，提出了新型摻雜技術(shù)，進(jìn)而有效提高了GaN LED結(jié)構(gòu)材料的內(nèi)量子效率；此外，圍繞GaN LED結(jié)構(gòu)體系的載流子輸運(yùn)和復(fù)合機(jī)制，在提高內(nèi)量子效率的同時(shí)，結(jié)合APSYS軟件模擬，研究大注入條件下的量子效率下降物理機(jī)制，進(jìn)行了新型GaN LED量子阱結(jié)構(gòu)設(shè)計(jì)。

關(guān)鍵詞：異質(zhì)體系 量子效率下降 量子阱

Abstract：Project progress smoothly， the expected goal is completed according to the plan. Around the important scientific problems about dynamic adjustment and epitaxial growth in the large mismatch of heterogeneous systems，Researches starting from the Graphical substrate based on epitaxial nucleation technique， studied the mismatch epitaxial nucleation mechanism and epitaxial doping mechanism， optimized the structure design and epitaxial growth of GaN based blue quantum well LED，put forward a new type of doping technique， and improved the internal quantum efficiency of GaN LED structural materials. In addition， Research on transport and recombination mechanisms of the carrier of the GaN LED to improve the internal quantum efficiency， A new GaN LED quantum well structures was designed to analyze quantum efficiency droop combining with the simulation software APSYS.

Key Words：Heterogeneous systems；Quantum efficiency droop；Quantum well

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